Title :
Optimization of the body-diode of power MOSFETs for high efficiency synchronous rectification
Author :
Zeng, Jun ; Wheatley, C. Frank ; Stokes, Rick ; Kocon, Chris ; Benczkowski, Stan
Author_Institution :
Intersil Corp., Mountaintop, PA, USA
Abstract :
An investigation is performed in this paper upon the impact of the parasitic bipolar junction transistor (BJT) with respect to the body-diode characteristics of the power MOSFET. Simulated and experimental results show that the forward conduction and the reverse recovery characteristics of the body-diode can be improved by enhancing the parasitic BJT, formed by the N+ source (emitter), P-well (base) and N-epi layer (collector) of power MOSFETs, Furthermore, the trade-off between enhancing the parasitic BJT and retaining the device´s unclamped inductive switching (UIS) capability is also addressed
Keywords :
circuit optimisation; power MOSFET; power bipolar transistors; power semiconductor diodes; rectification; body-diode; forward conduction; high efficiency synchronous rectification; parasitic BJT; power MOSFET; reverse recovery characteristics; unclamped inductive switching; Buck converters; Circuit simulation; Circuit testing; DC-DC power converters; Electromagnetic interference; Electronics industry; MOSFETs; Power semiconductor switches; Semiconductor diodes; Transient response;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856792
