DocumentCode :
2238338
Title :
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor
Author :
Wang, Lanxiang ; Han, Genquan ; Su, Shaojian ; Zhou, Qian ; Yang, Yue ; Guo, Pengfei ; Wang, Wei ; Tong, Yi ; Lim, Phyllis Shi Ya ; Xue, Chunlai ; Wang, Qiming ; Cheng, Buwen ; Yeo, Yee-Chia
Author_Institution :
Dept. Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
1
Lastpage :
2
Abstract :
We report a novel metal stanogermanide contact metallization process for high-mobility germanium-tin (Ge0.947Sn0.053 or GeSn) channel p-MOSFETs. Nickel-Platinum (NiPt) alloy was used to react with GeSn to form a multi-phase Ni and Pt stanogermanide [NiGeSn+Ptx(GeSn)y] contact on epitaxial Ge0.947Sn0.053. Rapid thermal annealing of co-sputtered Ni and Pt on GeSn/Ge (100) at temperatures from 350 °C to 550 °C in N2 was used for the stanogermanide formation. Compared with nickel stanogermanide (NiGeSn) contact, the Pt-incorporated contact, i.e. NiGeSn+Ptx(GeSn)y, exhibits enhanced thermal stability in a wide range of formation temperatures.
Keywords :
MOSFET; field effect transistors; germanium compounds; metallisation; nickel alloys; platinum alloys; rapid thermal annealing; sputtering; thermal stability; GeSn; NiPt; channel p-MOSFET; high mobility field-effect transistor; metal stanogermanide contact metallization; rapid thermal annealing; stanogermanide formation; temperature 350 C to 550 C; thermal stability; Annealing; Films; MOSFETs; Nickel; Stability analysis; Thermal stability; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
ISSN :
1930-8868
Print_ISBN :
978-1-4577-2083-3
Type :
conf
DOI :
10.1109/VLSI-TSA.2012.6210151
Filename :
6210151
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2238338
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