A fast-switching SOI SA-LIGBT without NDR region

Author

Jung-Hoon Chul ; Byeon, Dae-Seok ; Oh, Jae-Keun ; Han, Min-Koo ; Choi, Yearn-lk

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2000

fDate

2000

Firstpage

149

Lastpage

152

Abstract

The SOI separated shorted-anode LIGBT (SSA-LIGBT) has been investigated by experiments and numerical device simulations. In order to suppresses the negative differential resistance regime which is the inherent drawback of the shorted anode LIGBT (SA-LIGBT), the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path. The SSA-LIGBT shows a remarkably decreased on-state voltage drop when compared with the conventional SA-LIGBT and shows a one-order faster turn-off time than that of the LIGBT

Keywords

insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; power semiconductor switches; silicon-on-insulator; fast-switching SOI SA-LIGBT; highly resistive n-drift region; negative differential resistance; numerical device simulations; on-state voltage drop; pinch resistance; separated shorted-anode LIGBT; turn-off time; Anodes; Conductivity; Current density; Electrons; Fabrication; Impedance; Low voltage; Numerical simulation; Power integrated circuits; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856793

Filename

856793