Title :
A fast-switching SOI SA-LIGBT without NDR region
Author :
Jung-Hoon Chul ; Byeon, Dae-Seok ; Oh, Jae-Keun ; Han, Min-Koo ; Choi, Yearn-lk
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
The SOI separated shorted-anode LIGBT (SSA-LIGBT) has been investigated by experiments and numerical device simulations. In order to suppresses the negative differential resistance regime which is the inherent drawback of the shorted anode LIGBT (SA-LIGBT), the SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path. The SSA-LIGBT shows a remarkably decreased on-state voltage drop when compared with the conventional SA-LIGBT and shows a one-order faster turn-off time than that of the LIGBT
Keywords :
insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; power semiconductor switches; silicon-on-insulator; fast-switching SOI SA-LIGBT; highly resistive n-drift region; negative differential resistance; numerical device simulations; on-state voltage drop; pinch resistance; separated shorted-anode LIGBT; turn-off time; Anodes; Conductivity; Current density; Electrons; Fabrication; Impedance; Low voltage; Numerical simulation; Power integrated circuits; Spontaneous emission;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856793
