Title :
Improved device ruggedness by floating buffer ring
Author :
Ludikhuize, A.W. ; Heringa, A. ; Van Roijen, R. ; van Zwol, J.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
An integrated low-substrate-leakage diode structure is considered, operated in reverse breakdown mode, having a parasitic npn transistor. At high current, the Kirk effect, causing shift of the potential by the space charge of moving carriers, leads to high electric fields and causes device degradation. The application of a protective n+ buffer ring around the cathode redistributes field and current and improves the ruggedness. This principle is also successfully applied for improved ESD performance of a lateral DMOST in a Silicon-on-Insulator process
Keywords :
electrostatic discharge; high field effects; power MOSFET; power semiconductor diodes; semiconductor device breakdown; semiconductor device reliability; silicon-on-insulator; space charge; ESD performance; Kirk effect; SOI; Si-SiO2; cathode; device degradation; device ruggedness; floating buffer ring; high current; high electric fields; integrated low-substrate-leakage diode structure; lateral DMOST; parasitic npn transistor; protective n+ buffer ring; reverse breakdown mode; silicon-on-insulator process; space charge; Anodes; Breakdown voltage; Cathodes; Electric breakdown; Electrostatic discharge; Kirk field collapse effect; Semiconductor diodes; Silicon on insulator technology; Testing; Tin;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856794
