Single poly EEPROM for smart power IC´s

Author

Carman, Eric ; Parris, Patrice ; Chaffai, Hedia ; Cotdeloup, Fabrice ; Debortoii, Serge ; Hemon, Erwan ; Lin-Kwang, Jacques ; Perat, Olivier ; Sicard, Thierry

Author_Institution

Motorola Inc., Geneva, Switzerland

fYear

2000

fDate

2000

Firstpage

177

Lastpage

179

Abstract

Smart power integrated circuits need low density memory for applications such as trimming, IC customization, system addresses, and part traceability with few program/erase cycles. Memory solutions must be low cost and demonstrate high reliability in automotive environments. Programmability in the application is an advantage. We have developed a single poly EEPROM that meets these requirements and in addition gives significant die area savings over traditional low cost memory techniques

Keywords

EPROM; automotive electronics; integrated circuit reliability; power integrated circuits; IC customization; automotive environments; die area savings; high reliability; low cost; low density memory; part traceability; program/erase cycles; programmability; single poly EEPROM; smart power IC; smart power integrated circuits; system addresses; trimming; Application specific integrated circuits; Capacitors; Channel hot electron injection; Costs; Couplings; EPROM; MOS devices; Power integrated circuits; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856800

Filename

856800