Title :
Single poly EEPROM for smart power IC´s
Author :
Carman, Eric ; Parris, Patrice ; Chaffai, Hedia ; Cotdeloup, Fabrice ; Debortoii, Serge ; Hemon, Erwan ; Lin-Kwang, Jacques ; Perat, Olivier ; Sicard, Thierry
Author_Institution :
Motorola Inc., Geneva, Switzerland
Abstract :
Smart power integrated circuits need low density memory for applications such as trimming, IC customization, system addresses, and part traceability with few program/erase cycles. Memory solutions must be low cost and demonstrate high reliability in automotive environments. Programmability in the application is an advantage. We have developed a single poly EEPROM that meets these requirements and in addition gives significant die area savings over traditional low cost memory techniques
Keywords :
EPROM; automotive electronics; integrated circuit reliability; power integrated circuits; IC customization; automotive environments; die area savings; high reliability; low cost; low density memory; part traceability; program/erase cycles; programmability; single poly EEPROM; smart power IC; smart power integrated circuits; system addresses; trimming; Application specific integrated circuits; Capacitors; Channel hot electron injection; Costs; Couplings; EPROM; MOS devices; Power integrated circuits; Silicon; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856800
