Title :
Tungsten and tungsten silicide (WSix) as gate materials for trench MOSFETs
Author :
Ambadi, Satheesh ; Hanneun, D. ; Kitt, Ken ; Garcia, Carlos ; Pearse, Jeff
Author_Institution :
Technol. Module Dev., ON Semicond., USA
Abstract :
High-density and high-speed MOS-integrated devices require low gate resistance. Metallization of the gate electrodes reduces gate sheet resistance, improves switching efficiency, reduces distributed RC propagation delay, and possibly enhances device reliability when delivering power to large inductive loads using large area power MOSFETs. Tungsten (W) and/or tungsten silicide (WSix) gates have been developed with this goal for trench power MOSFET applications by chemical vapor deposition (CVD). The deposition techniques employed resulted in good step coverage and provide promising structural integrity against silicon (Si) or W diffusion. The paper discusses the metal/silicided gate development using various approaches
Keywords :
chemical interdiffusion; chemical vapour deposition; diffusion barriers; metallic thin films; power MOSFET; semiconductor device metallisation; semiconductor device reliability; tungsten; tungsten compounds; CVD; Si; Si diffusion; W; W diffusion; WSi; WSix; chemical vapor deposition; device reliability; distributed RC propagation delay; gate materials; gate sheet resistance; large area power MOSFETs; large inductive loads; low gate resistance; metal/silicided gate development; metallization; power; step coverage; structural integrity; switching efficiency; trench MOSFETs; tungsten; tungsten silicide; Capacitance; Delay effects; Electrodes; Feeds; MOSFETs; Metallization; Sheet materials; Silicides; Silicon; Tungsten;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856801
