DocumentCode
2238516
Title
Impact of 45° rotated substrate on UTBOX FDSOI high-k metal gate technology
Author
Ben Akkez, I. ; Fenouillet-Beranger, C. ; Cros, A. ; Perreau, P. ; Haendler, S. ; Weber, O. ; Andrieu, F. ; Pellissier-Tanon, D. ; Abbate, F. ; Richard, C. ; Beneyton, R. ; Gouraud, P. ; Margain, A. ; Borowiak, C. ; Gourvest, E. ; Bourdelle, K.K. ; Nguyen
Author_Institution
STMicroelectron., Crolles, France
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
2
Abstract
All these results show mainly the effectiveness of 45° rotated substrate enabling an increase of mobility performance for PMOS as compared to not rotated substrate. For NMOS devices, combined access resistance and mobility improvements explain the performance gain for rotated substrate.
Keywords
MOS integrated circuits; silicon-on-insulator; substrates; NMOS device; PMOS device; UTBOX FDSOI high-k metal gate technology; access resistance; mobility performance; rotated substrate;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
1930-8868
Print_ISBN
978-1-4577-2083-3
Type
conf
DOI
10.1109/VLSI-TSA.2012.6210158
Filename
6210158
Link To Document