Title :
Impact of 45° rotated substrate on UTBOX FDSOI high-k metal gate technology
Author :
Ben Akkez, I. ; Fenouillet-Beranger, C. ; Cros, A. ; Perreau, P. ; Haendler, S. ; Weber, O. ; Andrieu, F. ; Pellissier-Tanon, D. ; Abbate, F. ; Richard, C. ; Beneyton, R. ; Gouraud, P. ; Margain, A. ; Borowiak, C. ; Gourvest, E. ; Bourdelle, K.K. ; Nguyen
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
All these results show mainly the effectiveness of 45° rotated substrate enabling an increase of mobility performance for PMOS as compared to not rotated substrate. For NMOS devices, combined access resistance and mobility improvements explain the performance gain for rotated substrate.
Keywords :
MOS integrated circuits; silicon-on-insulator; substrates; NMOS device; PMOS device; UTBOX FDSOI high-k metal gate technology; access resistance; mobility performance; rotated substrate;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210158
