Title :
Resurfed lateral bipolar transistors for high-voltage, high-frequency applications
Author :
Cao, G.J. ; De Souza, M.M. ; Narayanan, E.M.S.
Author_Institution :
Dept. of Electr. & Electron. Eng., De Montfort Univ., Leicester, UK
Abstract :
A high performance 40-V lateral bipolar transistor has been evaluated. The incorporation of the Resurf effect together with a gradually doped collector results in a significant suppression of the Kirk effect. As a result, a cut-off frequency of 7 GHz can be obtained with the resurfed device in comparison to 3.5 GHz for the conventional device with an identical breakdown voltage
Keywords :
high-frequency effects; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; 40 V; 7 GHz; Kirk effect; breakdown voltage; cut-off frequency; gradually doped collector; high-voltage high-frequency applications; lateral bipolar transistor; resurf effect; resurfed lateral bipolar transistors; BiCMOS integrated circuits; Bipolar transistors; Cutoff frequency; Doping profiles; Isolation technology; Kirk field collapse effect; Medical simulation; Parasitic capacitance; Silicon on insulator technology; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856802
