Title :
A novel vertical deep trench RESURF DMOS (VTR-DMOS)
Author :
Glenn, Jack ; Siekkinen, Jim
Author_Institution :
One Corp. Center, Delphi Delco Electron. Syst., Kokomo, IN, USA
Abstract :
A new super junction (SJ)-DMOS device, the vertical deep trench RESURF DMOS or VTR-DMOS, is proposed. The VTR-DMOS is a conventional vertical N-channel DMOS with a deep trench adjacent to the gate. The trench creates a vertical sidewall into which boron is solid source diffused to form a P-type doping pillar which is charge balanced to the N-type epitaxial drift region. 2-D simulations comparing a VTR-DMOS to a conventional VDMOS indicate a 5.5× improvement in silicon-only Rsp for a BVdss>700 V
Keywords :
power MOSFET; 2D simulation; VTR-DMOS; super junction MOSFET; vertical deep trench RESURF DMOS; Boron; Doping; Etching; Fabrication; Implants; Metallization; Oxidation; Resists; Substrates; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856805
