Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology

Author

Tsai, C.H. ; Yang, C.W. ; Hsu, C.H. ; Lai, C.M. ; Lo, K.Y. ; Chen, C.G. ; Huang, R.M. ; Tsai, C.T. ; Hung, L.S. ; You, J.W. ; Hung, W.H. ; Chen, T.F. ; Cheng, O. ; Wu, J.Y. ; Tzou, S.F. ; Liang, C.W. ; Chen, I.C.

Author_Institution

Adv. Technol. Div., United Microelectron. Corp. Ltd. (UMC), Tainan, Taiwan

fYear

2012

fDate

23-25 April 2012

Firstpage

1

Lastpage

2

Abstract

High-K/Metal-Gate (HK/MG) reliability TDDB and BTI are investigated systematically for the first time through HfZrO_x gate stack engineering. To meet reliability requirements, it is shown that the HK film thickness, the position and concentration of a Zr dopant, utilizing post deposition anneal (PDA), and decoupled plasma nitridation (DPN) are important factors.

Keywords

CMOS integrated circuits; annealing; electric breakdown; integrated circuit reliability; nitridation; BTI; CMOS technology; HfZrO_x; TDDB; bias temperature instability; decoupled plasma nitridation; dopant concentration; gate stack engineering; high k-metal gate reliability; post deposition anneal; reliability improvement; size 28 mum; time-dependent dielectric breakdown; Films; Hafnium compounds; Logic gates; Semiconductor device reliability; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on

Conference_Location

Hsinchu

ISSN

1930-8868

Print_ISBN

978-1-4577-2083-3

Type

conf

DOI

10.1109/VLSI-TSA.2012.6210162

Filename

6210162