DocumentCode
2238645
Title
Thin-body FinFET as scalable low voltage transistor
Author
Hu, Chenming
Author_Institution
Dept. of EECS, Univ. of California, Berkeley, CA, USA
fYear
2012
fDate
23-25 April 2012
Firstpage
1
Lastpage
4
Abstract
FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.
Keywords
MOSFET; silicon-on-insulator; UTB-SOI FET; carrier mobility; device variation predicament; gate length; near-threshold circuit; scalable low voltage transistor; scaling path; thin-body FinFET; threshold voltage; Abstracts; Films; FinFETs; Fluctuations; Logic gates; MOSFET circuits; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location
Hsinchu
ISSN
1930-8868
Print_ISBN
978-1-4577-2083-3
Type
conf
DOI
10.1109/VLSI-TSA.2012.6210163
Filename
6210163
Link To Document