• DocumentCode
    2238645
  • Title

    Thin-body FinFET as scalable low voltage transistor

  • Author

    Hu, Chenming

  • Author_Institution
    Dept. of EECS, Univ. of California, Berkeley, CA, USA
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    FinFET provides needed relief to ICs from performance, power, and device variation predicaments. It also provides higher carrier mobility, especially at low voltage near the threshold voltage, giving promise to practical near-threshold circuits. Another new transistor conceived simultaneously with FinFET, UTB-SOI FET, is also entering production. Together they showed a new scaling path forward: scale the body thickness in proportion to gate length.
  • Keywords
    MOSFET; silicon-on-insulator; UTB-SOI FET; carrier mobility; device variation predicament; gate length; near-threshold circuit; scalable low voltage transistor; scaling path; thin-body FinFET; threshold voltage; Abstracts; Films; FinFETs; Fluctuations; Logic gates; MOSFET circuits; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210163
  • Filename
    6210163