Title :
A broadband 1.35THz GBP 120-mW common-collector feedback amplifier in SiGe technology
Author :
Gharib, Ahmed ; Fischer, Georg ; Weigel, Robert ; Kissinger, Dietmar
Author_Institution :
Inst. of Electron. Eng., Univ. for Erlangen-Nuremberg, Erlangen, Germany
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
This paper presents a broadband amplifier with 32.5 dB gain and a 3-dB bandwidth of 31.4 GHz. The amplifier exhibits a relatively flat gain response, as well as flat group delay over the full operational bandwidth. The circuit consists of two differential stages employing a novel feedback that is responsible for the bandwidth expansion with negligible increase in area and power consumption. The amplifier consumes 120mW from a 2.2V supply and shows a gain-bandwidth product (GBP) of more than 1.35 THz, which is the first to achieve such a high GBP for a very low power consumption.
Keywords :
Ge-Si alloys; feedback amplifiers; terahertz wave devices; wideband amplifiers; SiGe; bandwidth 31.4 GHz; bandwidth expansion; broadband common-collector feedback amplifier; flat gain response; flat group delay; frequency 1.35 THz; full operational bandwidth; gain bandwidth product; power 120 mW; power consumption; voltage 2.2 V; Bandwidth; Broadband communication; CMOS integrated circuits; Frequency measurement; Gain; Impedance matching; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352612
