A broadband 1.35THz GBP 120-mW common-collector feedback amplifier in SiGe technology

Author

Gharib, Ahmed ; Fischer, Georg ; Weigel, Robert ; Kissinger, Dietmar

Author_Institution

Inst. of Electron. Eng., Univ. for Erlangen-Nuremberg, Erlangen, Germany

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a broadband amplifier with 32.5 dB gain and a 3-dB bandwidth of 31.4 GHz. The amplifier exhibits a relatively flat gain response, as well as flat group delay over the full operational bandwidth. The circuit consists of two differential stages employing a novel feedback that is responsible for the bandwidth expansion with negligible increase in area and power consumption. The amplifier consumes 120mW from a 2.2V supply and shows a gain-bandwidth product (GBP) of more than 1.35 THz, which is the first to achieve such a high GBP for a very low power consumption.

Keywords

Ge-Si alloys; feedback amplifiers; terahertz wave devices; wideband amplifiers; SiGe; bandwidth 31.4 GHz; bandwidth expansion; broadband common-collector feedback amplifier; flat gain response; flat group delay; frequency 1.35 THz; full operational bandwidth; gain bandwidth product; power 120 mW; power consumption; voltage 2.2 V; Bandwidth; Broadband communication; CMOS integrated circuits; Frequency measurement; Gain; Impedance matching; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352612

Filename

6352612