Title :
SiC power devices with low on-resistance for fast switching applications
Author :
Friedrichs, Peter ; Mitlehner, Heinz ; Dohnke, Karl Otto ; Peters, Dethard ; Schörner, Reinhold ; Weinert, Ulrich ; Baudelot, Eric ; Stephani, Dietrich
Author_Institution :
Corp. Res. & Dev., Siemens AG, Germany
Abstract :
Silicon carbide switching devices exhibit superior properties compared to silicon devices. Low specific on-resistance for high breakdown voltages is believed to be the most outstanding feature of SiC power switching devices. In this paper, MOSFETs and JFETs capable to block 1800 V with a specific on-resistance of 47 mΩ cm2 and 14.5 mΩ cm2, resp., are discussed. However, there are additional advantages making SiC devices attractive for the system designer. The authors present fast recovery of the 6H-SiC MOSFET reverse diode (Qrr 30 nC, trr 20 ns) and fast switching as well as short circuit capability (1 ms) of vertical VJFETs. Finally, a short outlook to future SiC switching devices is given
Keywords :
field effect transistor switches; junction gate field effect transistors; power MOSFET; power field effect transistors; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1800 V; 6H-SiC MOSFET; 6H-SiC VJFET; SiC; blocking characteristics; breakdown voltage; on-resistance; reverse diode; short circuit capability; silicon carbide power switching device; Diodes; Epitaxial layers; JFETs; MOSFETs; Research and development; Silicon carbide; Silicon devices; Switches; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856809
