Title :
4500 V trench IEGTs having superior turn-on switching characteristics
Author :
Ninomiya, Hideaki ; Takahashi, Junji ; Sugiyama, Koich ; Inoue, Tomoki ; Hasegawa, Shigeru ; Ogura, Tsuneo ; Ohashi, Hiromichi
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
Turn-on characteristics of 4500 V trench IEGTs are discussed. First, turn-on switching power loss was measured using an inductive load circuit. As a result, the turn-on switching power loss of trench IEGTs was smaller than that of planer IEGTs because of high density of MOS-channels. Then di/dt ruggedness of trench IEGTs was measured using a LC resonance circuit. It is concluded that trench IEGTs have a sufficiently di/dt ruggedness
Keywords :
power semiconductor switches; power transistors; 4500 V; LC resonance circuit; di/dt ruggedness; inductive load circuit; trench IEGT; turn-on switching power loss; Charge carrier processes; Electrical resistance measurement; Loss measurement; Power measurement; Pulse circuits; Pulse measurements; Roentgenium; Switching circuits; Time measurement; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856811
