• DocumentCode
    2238766
  • Title

    Impact of fin height variations on SRAM yield

  • Author

    Dobrovolný, Petr ; Zuber, Paul ; Miranda, Miguel ; Bardon, Maria Garcia ; Chiarella, Thomas ; Buchegger, Peter ; Mercha, Karim ; Verkest, Diederik ; Steegen, An ; Horiguchi, Naoto

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrate that the variation of threshold voltage Vt of bulk finFET (BFF) devices due to the fin height variation (FHV) constitutes the major part of the overall device variations. Yet, the inter-die FHV affects SRAM cell variation performance in quantitatively comparable manner to intra-die variations (or mismatch). At the product level, however the impact of that component on array performance is negligible, demonstrating that mismatch remains dominating the overall statistical SRAM response and upper yield limit.
  • Keywords
    MOSFET; SRAM chips; integrated circuit yield; SRAM cell variation; SRAM yield; bulk finFET; fin height variations; inter-die FHV affects; intra-die variations; statistical SRAM response; threshold voltage; Arrays; Doping; FinFETs; Performance evaluation; Random access memory; Sensitivity; Standards;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210168
  • Filename
    6210168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2238766