Title :
MEMS module integration into SiGe BiCMOS technology for embedded system applications
Author :
Kaynak, Mehmet ; Valenta, Vaclav ; Schumacher, Hermann ; Tillack, Bernd
Author_Institution :
IHP GmbH, Leibniz Inst. for Innovative Microelectron., Frankfurt/Oder, Germany
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
The introduction of radio frequency micro-electro-mechanical systems (RFMEMS) as a monolithic option into state-of-the-art Si/SiGe BiCMOS foundry processes has paved the way for single chip radio frequency microsystems at millimeter wave frequencies. Deep silicon substrate etch techniques have also been developed to prevent high substrate losses which help in achieving high performance passive components at mm-wave frequencies. Using the same process techniques, realization of highly efficient on-chip antennas has become feasible, which in the millimeter-wave range no longer come with a hefty chip real estate penalty. In this paper, the current status of embedded BiCMOS+MEMS technology development is presented. Reconfigurable circuits using embedded RFMEMS switches and mm-wave transceivers with on-chip antennas are also discussed as application examples.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; embedded systems; field effect MIMIC; microswitches; millimetre wave antennas; silicon; BiCMOS foundry processes; MEMS module integration; Si-SiGe; deep silicon substrate etch techniques; embedded RF MEMS switches; embedded system applications; high performance passive components; highly efficient on-chip antennas; millimeter wave frequencies; mm-wave transceivers; radiofrequency microelectromechanical systems; reconfigurable circuits; single chip radiofrequency microsystems; BiCMOS integrated circuits; Inductors; Micromechanical devices; Silicon; Substrates; Switches; System-on-a-chip; On-Chip antennas; RFMEMS; RFMEMS switch; Silicon bipolar/BiCMOS process technology; mm-wave ICs; reconfigurable ICs;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352617