Title :
Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs
Author :
Vinet, M. ; Kumar, A. ; Grenouillet, L. ; Ponoth, S. ; Possémé, N. ; Destefanis, V. ; Mehta, S. ; Loubet, N. ; Le Tiec, Y. ; Monsieur, F. ; Liu, Q. ; Daval, N. ; Doris, B. ; Faynot, O. ; Poiroux, T.
Author_Institution :
LETI, CEA, Albany, NY, USA
Abstract :
For the first time, we extensively review to which extent ion implantation is viable for the design of n-FET transistors with gate length down to 20nm in a FDSOI technology. Three implantation schemes are covered and their potential and limitations are presented in terms of technological challenges and electrical performance.
Keywords :
MOS digital integrated circuits; MOSFET; ion implantation; silicon-on-insulator; electrical performance; ion implantation; n-FET transistors; n-MOSFET; technological challenges; ultra-thin FDSOI; Doping; Films; Ion implantation; Junctions; Logic gates; Performance evaluation; Silicon;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210170
