• DocumentCode
    2238803
  • Title

    Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs

  • Author

    Vinet, M. ; Kumar, A. ; Grenouillet, L. ; Ponoth, S. ; Possémé, N. ; Destefanis, V. ; Mehta, S. ; Loubet, N. ; Le Tiec, Y. ; Monsieur, F. ; Liu, Q. ; Daval, N. ; Doris, B. ; Faynot, O. ; Poiroux, T.

  • Author_Institution
    LETI, CEA, Albany, NY, USA
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    For the first time, we extensively review to which extent ion implantation is viable for the design of n-FET transistors with gate length down to 20nm in a FDSOI technology. Three implantation schemes are covered and their potential and limitations are presented in terms of technological challenges and electrical performance.
  • Keywords
    MOS digital integrated circuits; MOSFET; ion implantation; silicon-on-insulator; electrical performance; ion implantation; n-FET transistors; n-MOSFET; technological challenges; ultra-thin FDSOI; Doping; Films; Ion implantation; Junctions; Logic gates; Performance evaluation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210170
  • Filename
    6210170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2238803