Static and dynamic characteristics of 600-V, 10-A trench bipolar junction diodes

Author

You, Budong ; Huang, Alex Q. ; Sin, Johnny K O ; Xu, Aaron

Author_Institution

Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

fYear

2000

fDate

2000

Firstpage

233

Lastpage

236

Abstract

In this paper, 600-V, 10-A TBJDs were fabricated utilizing a self-aligned trench process, and characterized experimentally. The static and dynamic characteristics of the TBJDs were investigated at both room and elevated temperatures. Compared to the p-i-n diode, the TBJDs were shown to have not only superior reverse recovery characteristics, but also lower on-state voltage drops and the same reverse leakage current levels at elevated temperature

Keywords

characteristics measurement; isolation technology; leakage currents; power semiconductor diodes; semiconductor device measurement; 10 A; 600 V; TBJDs; dynamic characteristics; on-state voltage drops; power diodes; reverse leakage current levels; reverse recovery characteristics; self-aligned trench process; static characteristics; trench bipolar junction diodes; Anodes; Cathodes; Equivalent circuits; Etching; Fabrication; Leakage current; P-i-n diodes; Silicon compounds; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856814

Filename

856814