Over 2000 V FLR termination technologies for SiC high voltage devices

Author

Onose, Hidekatsu ; Oikawa, Saburo ; Yatsuo, Tsutomu ; Kobayashi, Yoshiyuki

Author_Institution

Hitachi Ltd., Japan

fYear

2000

fDate

2000

Firstpage

245

Lastpage

248

Abstract

The Field Limiting Ring (FLR) termination structures are examined in order to confirm the high voltage technology of SiC diodes and FETs. Elemental devices with planar FLR terminations are fabricated and their reverse I-V characteristics are determined using 4H n-type SiC. First demonstrations of breakdown voltages higher than 2000 V are succeeded by using FLR terminations. Optimal FLR spacing of the boron termination is wider than that of the aluminum case. This difference is considered to show that the lateral diffusion is remarkable for the process using boron implantation

Keywords

ion implantation; power field effect transistors; power semiconductor diodes; semiconductor device breakdown; semiconductor device measurement; semiconductor materials; silicon compounds; 2000 V; FETs; FLR termination technologies; SiC:Al; SiC:B; breakdown voltages; diodes; field limiting ring; high voltage devices; ion implantation; lateral diffusion; reverse I-V characteristics; Aluminum; Boron; Diodes; Electrodes; Epitaxial layers; FETs; Ion implantation; Low voltage; Metalworking machines; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856817

Filename

856817