Title :
Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding
Author :
Chang, Y.J. ; Ko, C.T. ; Hsiao, Z.C. ; Yu, T.H. ; Chen, Y.H. ; Lo, W.C. ; Chen, K.N.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.
Keywords :
copper; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; three-dimensional integrated circuits; tin; wafer bonding; CuSn; Kelvin structure; TSV; daisy chain design; electrical stability; microbumps; reliability evaluation; through silicon vias; wafer level hybrid bonding; wafer-level 3D integration structure; Bonding; Resistance; Semiconductor device reliability; Three dimensional displays; Through-silicon vias; Tin; 3D integration; BCB; Cu/Sn; Hybrid bonding; TSV;
Conference_Titel :
VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2083-3
DOI :
10.1109/VLSI-TSA.2012.6210175
