• DocumentCode
    2239002
  • Title

    Modeling collector current noise PSD of SiGe HBTs including self-heating and non-quasi-static effects

  • Author

    Kumar, Khamesh ; Chakravorty, Anjan

  • Author_Institution
    Dept. of Electr. Eng., IIT Madras, Chennai, India
  • fYear
    2012
  • fDate
    Sept. 30 2012-Oct. 3 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Limitations of existing models for collector current noise power spectral density of silicon germanium heterojunction bipolar transistors are figured out and suitable model modifications are proposed based on non-quasi-static delay and self-heating effects. Modeling results show excellent agreement with device simulated data obtained using hydrodynamic technique.
  • Keywords
    Ge-Si alloys; heat treatment; heterojunction bipolar transistors; hydrodynamics; HBT; SiGe; collector current noise PSD modelling; collector current noise power spectral density; heterojunction bipolar transistors; hydrodynamic technique; model modifications; nonquasistatic effects; self-heating effects; simulated data; Data models; Delay; Heterojunction bipolar transistors; Integrated circuit modeling; Noise; Scattering; Silicon germanium; NQS delay; SiGe HBT; electron diffusion noise; hole diffusion noise; noise PSD; self-heating;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
  • Conference_Location
    Portland, OR
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4673-3020-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2012.6352623
  • Filename
    6352623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239002