Thermal analysis of high power IGBT modules

Author

Khatir, Zoubir ; Lefebvre, Stepliane

Author_Institution

INRETS, Arcueil, France

fYear

2000

fDate

2000

Firstpage

271

Lastpage

274

Abstract

The technology of high power IGBT modules has been improved significantly these last years against thermal fatigue and the first weaknesses related to the bonding die attach have been well enough corrected. Nowadays, the most frequently observed failure mode is the solder layer cracks between copper base plate material and the ceramic. Experimental tests must be completed by numerical simulation tools in order to analyze this type of failure related to power cycling constraints. Thermal simulations of high power IGBT modules based on the boundary element method are described in this paper. A validation of the numerical tool is shown in steady-state and dynamic operations during a power cycle by comparison with experimental measurements. Finally, using the software, a model of solder layer cracks between copper base plate and the DCB ceramic is applied in order to investigate its effect on the thermal constraints

Keywords

boundary-elements methods; delamination; insulated gate bipolar transistors; modules; power transistors; semiconductor device packaging; temperature distribution; thermal analysis; thermal resistance; thermal stress cracking; BEM; Cu; Cu base plate material; DCB ceramic; boundary element method; dynamic operations; failure mode; high power IGBT modules; numerical simulation tools; power cycling constraints; solder delamination effect; solder layer cracks; steady-state operation; thermal analysis; thermal constraints; Bonding; Boundary element methods; Ceramics; Copper; Failure analysis; Fatigue; Insulated gate bipolar transistors; Microassembly; Numerical simulation; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856823

Filename

856823