Design and analysis of new silicided nano crystal dots field programmable ESD protection structures in BiCMOS

Author

Ma, Rui ; Shi, Zitao ; Wang, Xin ; Liu, Jian ; Zhao, Hui ; Wang, Li ; Dong, Zongyu ; Zhang, Chen ; Lin, Lin ; Zhou, Huimei ; Wang, Albert ; Liu, Jianlin ; Zhao, Bin ; Cheng, Yuhua

Author_Institution

Univ. of California, Riverside, Riverside, CA, USA

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

This paper discusses design and analysis of new nano crystal quantum dot (NC-QD) based field programmable electrostatic discharge (ESD) protection structures. Prototype NC-QD ESD structures were verified experimentally, achieving a wide ESD triggering voltage tuning range of 2.5V, very fast response time of ~100pS, ESD protection level of 25mA/μm in human body model (HBM) and 400mA/μm in charged device model (CDM), and very low leakage current of I_leak~15pA.

Keywords

BiCMOS integrated circuits; electrostatic discharge; integrated circuit design; leakage currents; nanostructured materials; quantum dots; BiCMOS; ESD protection level; ESD triggering voltage tuning range; charged device model; electrostatic discharge; field programmable ESD protection structures; human body model; leakage current; silicided nanocrystal quantum dots; voltage 2.5 V; Crystals; Electrostatic discharges; Logic gates; MOSFET circuits; Programming; Prototypes; Testing; ESD protection; Nano Crystal Dot; electrostatic discharge;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352627

Filename

6352627