Title :
600 V trench-gate NPT-IGBT with excellent low on-state voltage
Author :
Tanaka, Masahiro ; Teramae, Satoshi ; Takahashi, Yasushi ; Takeda, Toru ; Yamaguchi, Masakazu ; Ogura, Tsuneo ; Tsunoda, Tetsujiro ; Nakao, Satoshi
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
The 600 V Non-Punch Through (NPT) IGBT which has low on-state voltage (VCE(sat)) has been developed. This device has a fine pitch trench-gate structure at the emitter side and the collector layer with low injection efficiency at collector side. A novel profile has been installed to realize low injection efficiency and low VCE(sat). By numerical simulation, it has been confirmed that the trade-off relation between VCE(sat) and turn-off loss of the trench-gate NPT-IGBT is as good as that of the trench-gate punch through (PT-)IGBT. Adopting the novel profile for the collector structure, the low VCE(sat) of 1.6 V at 180 A/cm2 has been realized for the 600 V trench-gate NPT-IGBT
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; 1.6 V; 600 V; collector structure profile; fine pitch trench-gate structure; low injection efficiency; low on-state voltage; nonpunch through IGBT; numerical simulation; trench-gate NPT-IGBT; turnoff loss; Charge carrier lifetime; Circuits; Contact resistance; Electrodes; Impurities; Insulated gate bipolar transistors; Inverters; Low voltage; Motor drives; Numerical simulation;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856825
