DocumentCode
2239142
Title
Experimental measurements of recombination lifetime in proton irradiated power devices
Author
Daliento, Santolo ; Sanseverino, Annwiata ; Spirito, Paolo ; Busatto, Crlovanni ; Wiss, Jeff
Author_Institution
Dept. of Electron. & Telecommun., Naples Univ., Italy
fYear
2000
fDate
2000
Firstpage
283
Lastpage
285
Abstract
Experimental measurements of the recombination lifetime profile induced by proton implantation processes are presented. Results show the capability of the differential technique to monitor lifetime engineering processes
Keywords
carrier lifetime; electron-hole recombination; ion implantation; power semiconductor devices; proton effects; semiconductor device measurement; differential technique; experimental measurements; lifetime engineering processes monitoring; lifetime profile; proton implantation processes; proton irradiated power devices; recombination lifetime; Carrier confinement; Life testing; Monitoring; Performance evaluation; Power engineering and energy; Power measurement; Protons; Radiative recombination; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location
Toulouse
ISSN
1063-6854
Print_ISBN
0-7803-6269-1
Type
conf
DOI
10.1109/ISPSD.2000.856826
Filename
856826
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