Modelling and simulation of the transient electromagnetic behavior of high power bus bars under switching conditions

Author

Böhm, Peter ; Wachutka, Gerhard

Author_Institution

Inst. for Phys. & Electrotechnol., Tech. Univ. Munchen, Germany

fYear

2000

fDate

2000

Firstpage

303

Lastpage

307

Abstract

This article presents a new approach to the evaluation of the eigendynamics of interconnects encountered in high frequency power converters and high power semiconductor modules. It is based on a three-dimensional transient electromagnetic field analysis under realistic switching conditions which allows to investigate the various distributed parasitic effects caused by short switching times, steep current and voltage gradients and therefore large di/dt. The finite element simulator NM SESES^TM has been extended by an electromagnetic kernel to solve these problems. The capability of the simulator is demonstrated by some illustrative examples

Keywords

busbars; finite element analysis; power convertors; power semiconductor switches; semiconductor device models; transient analysis; NM SESES; bus bar; distributed parasitic effects; finite element simulation; high frequency power converter; high power semiconductor module; interconnect eigendynamics; switching characteristics; three-dimensional transient electromagnetic field analysis; Cause effect analysis; Electromagnetic analysis; Electromagnetic fields; Electromagnetic modeling; Electromagnetic transients; Finite element methods; Frequency conversion; Power semiconductor switches; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Conference_Location

Toulouse

ISSN

1063-6854

Print_ISBN

0-7803-6269-1

Type

conf

DOI

10.1109/ISPSD.2000.856831

Filename

856831