A novel `cool´ insulated base transistor

A novel, planar, Cool Insulated Base Transistor (IBT) is presented. This is the first MOS-controlled bipolar semiconductor device, which incorporates the super junction concept. The Cool IBT has a current amplification of (β+1)* the Cool MOSFET current, where β is the gain of the inherent NPN transistor. Unlike the IGBT, cathode cells of the IBT and MOSFET can be easily paralleled on the same chip. Thus, the device can be turned on at a drain voltage of 0 V, while retaining the low on-resistance of the Cool IBT