• DocumentCode
    2239321
  • Title

    Fast noise prediction for process optimization using only standard DC and S-parameter measurements

  • Author

    Gridelet, E. ; Scholten, A.J. ; Klaassen, D.B.M. ; van Dalen, R. ; Pijper, R. ; Magnée, P. H C ; Tiemeijer, L.F. ; Dinh, V.T. ; Vanhoucke, T.

  • Author_Institution
    NXP Semicond. Res., Leuven, Belgium
  • fYear
    2012
  • fDate
    Sept. 30 2012-Oct. 3 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a method to select, amongst a series of devices differing on their process, the best device in terms of high-frequency noise characteristics, only from standard DC and S-parameter measurements and without the need of noise measurements. The method is developed and tested using synthetic input data and noise data generated with the MEXTRAM compact model and validated against on-wafer noise measurements on a series of devices with different process variations. A very simple equivalent circuit, with base, emitter and collector resistances as the only external components, is shown to be sufficient to rightfully sort devices in terms of their high-frequency noise performance. This allows to fully automate noise prediction procedure based on standard DC and S-parameter measurements without the need of manual data manipulation.
  • Keywords
    BiCMOS integrated circuits; S-parameters; bipolar MMIC; electric noise measurement; field effect MMIC; integrated circuit noise; MEXTRAM compact model; S-parameter measurement; device selection; high frequency noise characteristics; high-frequency noise performance; noise data; noise prediction; on-wafer noise measurements; process optimization; standard DC measurement; synthetic input data; Electrical resistance measurement; Equivalent circuits; Integrated circuit modeling; Noise; Noise measurement; Radio frequency; Resistance; RF circuits; Silicon bipolar/BiCMOS process technology; bipolar modeling and simulation; noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
  • Conference_Location
    Portland, OR
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4673-3020-6
  • Type

    conf

  • DOI
    10.1109/BCTM.2012.6352637
  • Filename
    6352637