DocumentCode
2239422
Title
Nanoparticle-enhanced tunnel junctions for reduced free-carrier absorption in mid-IR lasers
Author
Crook, Adam M. ; Nair, Hari P. ; Bank, Seth R.
Author_Institution
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We present tunnel junctions, employing buried semimetallic nanoparticles, to reduce intervalence-band absorption in mid-IR lasers. Proof-of-concept results demonstrate low resistance tunnel junctions with low p-type dopant concentrations, suitable for integration into GaSb-based diode lasers.
Keywords
doping profiles; infrared spectra; nanoparticles; nanophotonics; semiconductor lasers; buried semimetallic nanoparticles; diode lasers; intervalence-band absorption; low-resistance tunnel junctions; mid-IR lasers; nanoparticle-enhanced tunnel junctions; p-type dopant concentrations; reduced free-carrier absorption; Diode lasers; Junctions; Materials; Nanoparticles; Optical reflection; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950587
Link To Document