• DocumentCode
    2239493
  • Title

    Using “Adaptive resurf” to improve the SOA of LDMOS transistors

  • Author

    Hower, P. ; Lin, J. ; Merchant, S. ; Paiva, S.

  • Author_Institution
    Texas Instrum. Inc., Merrimack, NH, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    345
  • Lastpage
    348
  • Abstract
    Measured SOA is compared with simulations for field gap LDMOS transistors. The utility of an n-type “resurf” or “nfield” implant under the field oxide is considered. For a fixed VDS, it is shown that there is an optimum value of nfield dose
  • Keywords
    ion implantation; power MOSFET; Adaptive Resurf; LDMOS transistor; SOA; field gap structure; ion implantation; Automatic testing; Degradation; Driver circuits; Electrons; Implants; Instruments; Power integrated circuits; Semiconductor optical amplifiers; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856840
  • Filename
    856840
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239493