Terahertz detector arrays in a high-performance SiGe HBT technology

Author

Hadi, R.A. ; Grzyb, Janusz ; Heinemann, Bernd ; Pfeiffer, Ullrich

Author_Institution

IHCT, Univ. of Wuppertal, Wuppertal, Germany

fYear

2012

fDate

Sept. 30 2012-Oct. 3 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents heterojunction bipolar transistor (HBT) based terahertz power detectors implemented in a 0.25-μm SiGe process technology. The detectors have been arranged in a 3 × 5-pixel FPA and characterized at 0.65 THz. Referred to the collecting aperature of a 3-mm diameter lens, a maximum current responsivity R_I of 0.79 A/W and a minimum noise equivalent power NEP of 370 pW/√Hz have been measured at a 1-kHz chopping frequency.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; focal planes; heterojunction bipolar transistors; submillimetre wave detectors; submillimetre wave imaging; FPA; HBT technology; NEP; SiGe; current responsivity; focal plane arrays; frequency 0.65 THz; heterojunction bipolar transistor; noise equivalent power; size 0.25 mum; size 3 mm; terahertz detector arrays; terahertz power detectors; Antennas; Detectors; Heterojunction bipolar transistors; Imaging; Lenses; Silicon; Silicon germanium; BiCMOS; HBT; SiGe; Submillimeter wave detectors; submillimeter wave imaging; terahertz direct detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE

Conference_Location

Portland, OR

ISSN

1088-9299

Print_ISBN

978-1-4673-3020-6

Type

conf

DOI

10.1109/BCTM.2012.6352643

Filename

6352643