• DocumentCode
    2239648
  • Title

    High density, sub 10 m Ohm Rdson 100 volt N-channel FETs for automotive applications

  • Author

    Sobhani, Saed ; Kinzer, Dan ; Ma, Ling ; Asselanis, Dino

  • Author_Institution
    Int. Rectifier Corp., El Segundo, CA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    373
  • Lastpage
    376
  • Abstract
    Presented in this paper are the results of high-density trench designs in producing extremely low Rdson MOSFETs in the 100 VN voltage class. R.A. products of 110 mΩ.mm2 and 125 mΩ.mm2 (depending on design) at 10 V gate are the lowest reported in the industry. The incentive behind this work is to address the rising need of this class of MOSFETs in Automotive applications
  • Keywords
    automotive electronics; power MOSFET; 10 mohm; 100 V; N-channel FET; automotive electronics; high-density trench design; power MOSFET; Automobiles; Automotive applications; Electric breakdown; FETs; Packaging; Rectifiers; Surges; Thermal management; Topology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856846
  • Filename
    856846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239648