Title :
High-density low on-resistance trench MOSFETs employing oxide spacers and self-align technique for DC/DC converter
Author :
Kim, Jongdae ; Tae Moon Rob ; Kim, Sang-Gi ; Song, Q. Sang ; Koo, Jin Gun ; Nam, Kee So0 ; Cho, Kyoung-Ik ; Ma, Dong Sung
Author_Institution :
Micro-Electron. Technol. Lab., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
A new process technique for fabricating very high-density trench MOSFETs using 4 mask layers with oxide spacers and self-align technique is realized. This technique reduces the process steps, trench width, and source and p-body region with a resulting increase in cell density and current driving capability, and decrease in on-resistance as well as cost-effective production capability. Specific on-resistance of 0.41 mΩ.cm2 with a blocking voltage of 43 is obtained
Keywords :
DC-DC power convertors; power MOSFET; DC/DC converter; blocking voltage; cell density; current driving; fabrication; mask layer; on-resistance; oxide spacer; power semiconductor device; self-align technique; trench MOSFET; Anisotropic magnetoresistance; Boron; DC-DC power converters; Etching; Fabrication; Laboratories; MOSFETs; Moon; Ohmic contacts; Space technology;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856848
