DocumentCode :
2239746
Title :
Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance
Author :
Xu, Shuming ; Ren, Changhong ; Foo, Pang-Dow ; Liu, Yong ; Su, Yi
Author_Institution :
Inst. of Microelectron., Singapore
fYear :
2000
fDate :
2000
Firstpage :
385
Lastpage :
388
Abstract :
In this paper, a novel radio frequency power device called dummy gated VDMOS has been proposed and demonstrated experimentally. The new device is produced using the standard RF VDMOS process technology. An improvement in breakdown voltage by 20% is realized, while the feedback capacitance Crss is reduced by three times leading to a desired HF performance and high reliability
Keywords :
capacitance; power MOSFET; semiconductor device breakdown; RF power device; breakdown voltage; dummy gated radio frequency VDMOSFET; feedback capacitance; high frequency characteristics; reliability; Fabrication; Feedback; Hafnium; Lead time reduction; Microelectronics; Parasitic capacitance; Physics; Radio frequency; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
ISSN :
1063-6854
Print_ISBN :
0-7803-6269-1
Type :
conf
DOI :
10.1109/ISPSD.2000.856850
Filename :
856850
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2239746
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