• DocumentCode
    2239746
  • Title

    Dummy gated radio frequency VDMOSFET with high breakdown voltage and low feedback capacitance

  • Author

    Xu, Shuming ; Ren, Changhong ; Foo, Pang-Dow ; Liu, Yong ; Su, Yi

  • Author_Institution
    Inst. of Microelectron., Singapore
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    385
  • Lastpage
    388
  • Abstract
    In this paper, a novel radio frequency power device called dummy gated VDMOS has been proposed and demonstrated experimentally. The new device is produced using the standard RF VDMOS process technology. An improvement in breakdown voltage by 20% is realized, while the feedback capacitance Crss is reduced by three times leading to a desired HF performance and high reliability
  • Keywords
    capacitance; power MOSFET; semiconductor device breakdown; RF power device; breakdown voltage; dummy gated radio frequency VDMOSFET; feedback capacitance; high frequency characteristics; reliability; Fabrication; Feedback; Hafnium; Lead time reduction; Microelectronics; Parasitic capacitance; Physics; Radio frequency; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856850
  • Filename
    856850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239746