• DocumentCode
    2239902
  • Title

    The Influence of Strain on Electronic Structure of InAs/GaAs Quantum Dot with wetting layer

  • Author

    Liu, Yumin ; Yu, Zhongyuan

  • Author_Institution
    Sch. of Sci., Beijing Univ. of Posts & Telecommun., Beijing
  • fYear
    2007
  • fDate
    26-31 Aug. 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Using the axis-symmetry finite element numerical simulations, it is demonstrated that the strain distributions and wetting layer have great influences on the electronic structure of the self-organized quantum dot.
  • Keywords
    III-V semiconductors; finite element analysis; gallium arsenide; indium compounds; semiconductor quantum dots; wetting; axis-symmetry; electronic structure; finite element numerical simulations; self-organized quantum dot; strain distributions; wetting layer; Capacitive sensors; Effective mass; Electrons; Finite element methods; Gallium arsenide; Lattices; Photonic band gap; Quantum computing; Quantum dots; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    978-1-4244-1173-3
  • Electronic_ISBN
    978-1-4244-1174-0
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2007.4391217
  • Filename
    4391217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2239902