DocumentCode
2240064
Title
Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode
Author
Kim, K.W. ; Jung, K.W. ; Ryu, S.P. ; Cho, N.K. ; Lim, J.Y. ; Park, S.J. ; Song, J.D. ; Choi, N.K. ; Lee, J.I. ; Park, J.H.
Author_Institution
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul
fYear
2007
fDate
26-31 Aug. 2007
Firstpage
1
Lastpage
2
Abstract
We have compared the performances of 980-nm InGaAs quantum-dot and quantum-well laser diode grown by molecular beam epitaxy. The quantum-dot laser diodes show superior performance to the quantum-well laser diodes in their lower threshold current density and temperature sensitivity.
Keywords
III-V semiconductors; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum dot lasers; quantum well lasers; InGaAs; molecular beam epitaxy; quantum-dot laser diode; quantum-well laser diode; temperature sensitivity; threshold current density; wavelength 980 nm; Diodes; Erbium-doped fiber amplifier; Indium gallium arsenide; Molecular beam epitaxial growth; Performance gain; Pulse measurements; Quantum dots; Quantum well lasers; Temperature sensors; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location
Seoul
Print_ISBN
978-1-4244-1173-3
Electronic_ISBN
978-1-4244-1174-0
Type
conf
DOI
10.1109/CLEOPR.2007.4391224
Filename
4391224
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