Mode locked 1550 nm VECSEL using a two quantum wells GaInNAs Saturable Absorber

Author

Khadour, A. ; Bouchoule, S. ; Aubin, G. ; Tourrenc, J.P. ; Miard, A. ; Harmand, J.C. ; Decobert, J. ; Oudar, J.L.

Author_Institution

Lab. de Photonique et de Nanostruct., Marcoussis

fYear

2008

fDate

4-9 May 2008

Firstpage

1

Lastpage

2

Abstract

We report a 2 GHz mode locked vertical external cavity surface emitting laser using a hybrid metal-metamorphic Bragg mirror on the gain structure with a resonant two quantum wells GaInNAs semiconductor saturable absorber mirror (SESAM).

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; laser mode locking; optical saturable absorption; quantum well lasers; surface emitting lasers; GaInNAs; SESAM; VECSEL; hybrid metal-metamorphic Bragg mirror; laser gain structure; laser mode locking; quantum wells; semiconductor saturable absorber mirror; vertical external cavity surface emitting laser; wavelength 1550 nm; Gallium arsenide; Laser excitation; Laser mode locking; Mirrors; Pump lasers; Quantum well lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.4050) Mode-locked lasers; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

iet

Conference_Titel

Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on

Conference_Location

San Jose, CA

Print_ISBN

978-1-55752-859-9

Type

conf

Filename

4571647