Title :
Influence of carrier gas on Cu nucleation, film properties and MOCVD reaction kinetics
Author :
Röber, J. ; Riedel, S. ; Schulz, S.E. ; Gessner, T.
Author_Institution :
Fakultat fur Elektrotech. und Informationstech., Tech. Univ. Chemnitz, Germany
Abstract :
Copper CVD has been investigated for a few years as a key process for copper metallization technology among others because of its capability for high step coverage and low process temperatures. Beside low resistivity a high film growth rate, along with strong adhesion of the Cu film to the underlayer are essential for practical use in fabrication line. This paper presents the effect of carrier gas and precursor composition on the characteristics of copper MOCVD using the Cu(hfac)TMVS precursor.
Keywords :
chemical vapour deposition; copper; metallic thin films; metallisation; nucleation; reaction kinetics; Cu; Cu(hfac)TMVS precursor; MOCVD reaction kinetics; adhesion; carrier gas; copper film; fabrication; growth; metallization; nucleation; resistivity; Additives; Argon; Conductivity; Copper; Hydrogen; Kinetic theory; MOCVD; Metallization; Substrates; Temperature;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621046
