Title :
Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCl4-NH3-H2 gaseous phase
Author :
Bouteville, A. ; Imhoff, L. ; Remy, J.C.
Author_Institution :
Ecole Nat. Superieure d´´Arts et Metiers, Paris, France
Abstract :
Titanium nitride layers have been deposited on silicon substrates by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiC1/sub 4/-NH/sub 3/-H/sub 2/ gaseous phase. Our aim is to better understand the formation of TiN in order to reduce deposition temperature while keeping reasonable resistivity. All the investigations show the importance of the NH/sub 3//TiCl/sub 4/ ratio. Deposition has been first carried out in the temperature range of 700-900/spl deg/C then as low as 500/spl deg/C.
Keywords :
chemical vapour deposition; electrical resistivity; integrated circuit metallisation; rapid thermal processing; titanium compounds; 500 to 900 degC; IC metallisation; Si; TiN-Si; deposition temperature; rapid thermal low pressure chemical vapor deposition; resistivity; Atomic layer deposition; Chemical vapor deposition; Conductivity; Inductors; Inorganic materials; Metallization; Silicon; Temperature; Tin; Titanium;
Conference_Titel :
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location :
Villard de Lans, France
DOI :
10.1109/MAM.1997.621052
