• DocumentCode
    2240802
  • Title

    Rapid thermal low pressure chemical vapor deposition of TiN layers from the TiCl4-NH3-H2 gaseous phase

  • Author

    Bouteville, A. ; Imhoff, L. ; Remy, J.C.

  • Author_Institution
    Ecole Nat. Superieure d´´Arts et Metiers, Paris, France
  • fYear
    1997
  • fDate
    16-19 March 1997
  • Firstpage
    43
  • Lastpage
    44
  • Abstract
    Titanium nitride layers have been deposited on silicon substrates by Rapid Thermal Low Pressure Chemical Vapor Deposition from TiC1/sub 4/-NH/sub 3/-H/sub 2/ gaseous phase. Our aim is to better understand the formation of TiN in order to reduce deposition temperature while keeping reasonable resistivity. All the investigations show the importance of the NH/sub 3//TiCl/sub 4/ ratio. Deposition has been first carried out in the temperature range of 700-900/spl deg/C then as low as 500/spl deg/C.
  • Keywords
    chemical vapour deposition; electrical resistivity; integrated circuit metallisation; rapid thermal processing; titanium compounds; 500 to 900 degC; IC metallisation; Si; TiN-Si; deposition temperature; rapid thermal low pressure chemical vapor deposition; resistivity; Atomic layer deposition; Chemical vapor deposition; Conductivity; Inductors; Inorganic materials; Metallization; Silicon; Temperature; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
  • Conference_Location
    Villard de Lans, France
  • ISSN
    1266-0167
  • Type

    conf

  • DOI
    10.1109/MAM.1997.621052
  • Filename
    621052
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2240802