LPCVD Me-Si-N (Me = Ta, Ti, W, Re) diffusion barriers in Si/SiO2/Cu metallizations

Summary form only given. Copper is the most widely accepted material for advanced metallization especially as interconnects for future semiconductor devices. However, copper is a fast diffuser in silicon and other materials of integrated circuits during thermal treatments. Highly effective diffusion barriers are thus essential if copper is to become the future metal interconnect. This study deals with LPCVD ternary silicides Me-Si-N (Me= Re, W, Ti, Ta) deposited on SiO/sub 2//Si substrates, starting from silane, in situ fabricated metal chlorides, ammonia, hydrogen and argon. A thermodynamic investigation allowed classification of the four materials in different categories according to the stability of metal nitrides MeN.