DocumentCode
2241303
Title
High-power BCB encapsulated VCSELs based on InP
Author
Gruendl, T. ; Mueller, M. ; Geiger, K. ; Grasse, C. ; Boehm, G. ; Meyer, R. ; Amann, M.-C.
Author_Institution
Walter Schottky Inst., Tech. Univ. Muenchen, Garching, Germany
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
The high temperature behavior of short cavity InP based VCSEL devices with 5.5 μm apertures is presented. They show record optical output powers and SMSRs beyond 50 dB over the whole temperature range.
Keywords
III-V semiconductors; high-temperature effects; indium compounds; laser cavity resonators; organic compounds; semiconductor lasers; surface emitting lasers; InP; VCSEL; benzo-cyclo-butene; high temperature effects; high-power BCB encapsulation; optical output powers; short cavity based devices; side mode suppression ratio; size 5.5 mum; Cavity resonators; High speed optical techniques; Optical feedback; Optical fibers; Optical reflection; Optical variables control; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950661
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