DocumentCode :
2241331
Title :
Analytical characterization of dead time in the zero-crossing region of the inductor current
Author :
Hobbs, I.K. ; Beukes, H.J. ; Koeslag, F.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Stellenbosch, Stellenbosch, South Africa
fYear :
2009
fDate :
23-25 Sept. 2009
Firstpage :
1
Lastpage :
7
Abstract :
This paper presents a method for characterizing the average error voltage in the zero-crossing region of the inductor current during the dead time. The analysis makes use of an existing analytical solution to model the reverse recovery of the power diodes in this region. The proposed analytical solution is verified by experimental results.
Keywords :
inductors; power semiconductor diodes; inductor current; power diodes; reverse recovery; zero-crossing region; Africa; Analytical models; Circuit topology; Diodes; Harmonic distortion; Inductors; Insulated gate bipolar transistors; Inverters; Power engineering and energy; Voltage; Compensation; Dead Time; Inverter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
AFRICON, 2009. AFRICON '09.
Conference_Location :
Nairobi
Print_ISBN :
978-1-4244-3918-8
Electronic_ISBN :
978-1-4244-3919-5
Type :
conf
DOI :
10.1109/AFRCON.2009.5308123
Filename :
5308123
Link To Document :
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