Title :
Near-infrared Near-field Imaging Spectroscopy of Semiconductor Quantum Structures for Optical Communication Devices
Author :
Saiki, T. ; Kubota, R. ; Nakashima, K. ; Mizuno, D.
Author_Institution :
Electron. & Electr. Eng., Keio Univ., Yokohama
Abstract :
The nonuniform distribution of N in GaInNAs alloys was investigated by near-field photoluminescence imaging spectroscopy of localized states driven by giant band-gap reduction due to N incorporation. We observed both strongly localized excitons confined in N clusters and rather delocalized excitons, which indicate the onset of alloy formation.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; localised states; optical communication equipment; optical materials; photoluminescence; semiconductor quantum wells; GaInNAs; GaInNAs alloys; N incorporation; band-gap reduction; delocalized excitons; near-field photoluminescence imaging spectroscopy; near-infrared near-field imaging spectroscopy; nonuniform distribution; optical communication devices; semiconductor quantum structures; Excitons; Fluctuations; Gallium arsenide; Optical fiber communication; Optical imaging; Optical microscopy; Photoluminescence; Photonic band gap; Spatial resolution; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-1173-3
Electronic_ISBN :
978-1-4244-1174-0
DOI :
10.1109/CLEOPR.2007.4391279
