Near-field spectroscopy and microscopy of InAs single quantum dots

Author

Yu, Young-Jun ; Noh, Haneol ; Arakawa, Yasuhiko ; Jhe, Wonho

Author_Institution

Sch. of Phys. & Astron., Seoul Nat. Univ., Seoul

fYear

2007

fDate

26-31 Aug. 2007

Firstpage

1

Lastpage

2

Abstract

We have reported the high-resolution photoluminescence (PL) spectroscopic and microscopic study of laterally coupled InAs/GaAs self-assembled quantum dots by using a low-temperature near-field scanning optical microscope. We have observed slightly split PL spectra, which are associated with the bonding and antibonding energy states between two coupled quantum dots.

Keywords

III-V semiconductors; energy states; gallium arsenide; indium compounds; near-field scanning optical microscopy; photoluminescence; self-assembly; semiconductor quantum dots; InAs-GaAs; PL spectra; coupled quantum dots; energy states; high-resolution photoluminescence spectroscopic study; low-temperature near-field scanning optical microscope; microscopic study; near-field microscopy; near-field spectroscopy; self-assembled quantum dots; single quantum dots; Chemical lasers; Optical fibers; Optical microscopy; Optical pumping; Quantum dot lasers; Quantum dots; Semiconductor nanostructures; Spatial resolution; Spectroscopy; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics - Pacific Rim, 2007. CLEO/Pacific Rim 2007. Conference on

Conference_Location

Seoul

Print_ISBN

978-1-4244-1173-3

Electronic_ISBN

978-1-4244-1174-0

Type

conf

DOI

10.1109/CLEOPR.2007.4391281

Filename

4391281