• DocumentCode
    2241453
  • Title

    Lasing in metal-coated GaN nano-stripe at room temperature

  • Author

    Wang, Y.G. ; Chen, C.C. ; Chiu, C.H. ; Kuo, M.Y. ; Shih, M.H. ; Kuo, H.C.

  • Author_Institution
    Dept. of Photonic & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We demonstrated lasing in a metal-coated GaN nano-stripe under room temperature pulsed operation, and the lasing mode at 370nm were observed. Aluminum and SiO2 layers were coated on the undoped GaN nano-stripe.
  • Keywords
    III-V semiconductors; aluminium; gallium compounds; nanophotonics; semiconductor lasers; silicon compounds; wide band gap semiconductors; Al; GaN; SiO2; lasing mode; metal-coated nanostripe; room temperature pulsed operation; wavelength 370 nm; Cavity resonators; Fiber optics; Gallium nitride; Laser modes; Metals; Nanoscale devices; Optical device fabrication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2241453