Title :
Parichute: Generalized Turbocode-Based Error Correction for Near-Threshold Caches
Author :
Miller, Timothy N. ; Thomas, Renji ; Dinan, James ; Adcock, Bruce ; Teodorescu, Radu
Author_Institution :
Dept. of Comput. Sci. & Eng., Ohio State Univ., OH, USA
Abstract :
Energy efficiency is a primary concern for microprocessor designers. A very effective approach to improving the energy efficiency of a chip is to lower its supply voltage to very close to the transitor´s threshold voltage, into what is called the near-thresold region. This reduces power consumption dramatically but also decreases reliability by orders of magnitude, especially for SRAM structures such as caches. This paper presents Parichute, a novel and powerful error correction technique based on turbo product codes that allows caches to continue to operate in near-threshold, while trading off some cache capacity to store error correction information. Our Parichute-based cache implementation is flexible, allowing protection to be disabled in error-free high voltage operation and selectively enabled as the voltage is lowered and the error rate increases. Parichute is also self-testing and variation-aware, allowing selective protection of cache sections that exhibit errors at higher supply voltages because of process variation. Parichute achieves significantly stronger error correction compared to prior cache protection techniques, enabling 2× to 4× higher cache capacity at low voltages. Our results also show that a system with a Parichute-protected L2 cache can achieve a 34% reduction in system energy (processor and DRAM) compared to a system operating at nominal voltage.
Keywords :
SRAM chips; cache storage; energy conservation; error correction codes; microprocessor chips; turbo codes; Parichute; SRAM; cache protection; energy efficiency; error correction codes; generalized turbocode; microprocessor designers; near-threshold cache;
Conference_Titel :
Microarchitecture (MICRO), 2010 43rd Annual IEEE/ACM International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-9071-4
DOI :
10.1109/MICRO.2010.28