DocumentCode
2241614
Title
Helically propagating modes in InGaAs nanoneedle lasers grown on poly-silicon and silicon substrates
Author
Tran, Thai ; Chen, Roger ; Ng, Kar Wei ; Ko, Wai Son ; Lu, Fanglu ; Chang-Hasnain, Connie J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
InGaAs nanoneedle lasers were grown on both poly crystalline-Si and (100)-Si substrates by low temperature (400°C) MOCVD. Measured near field mode patterns agree well with FDTD simulations, confirming helically propagating modes as lasing modes.
Keywords
III-V semiconductors; MOCVD; elemental semiconductors; finite difference time-domain analysis; gallium arsenide; indium compounds; nanophotonics; semiconductor lasers; silicon; FDTD simulations; InGaAs; Si; helically propagating modes; lasing modes; low temperature MOCVD; nanoneedle lasers; near field mode patterns; polycrystalline silicon; silicon substrates; temperature 400 C; Indium gallium arsenide; Laser modes; Needles; Optical pumping; Pump lasers; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950675
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