DocumentCode
2241794
Title
Integration of a stack of two fluorine doped silicon oxide thin films with interconnect metallization for a sub-0.35 /spl mu/m inter-metal dielectric applications
Author
Baud, L. ; Passemard, G. ; Gobil, Y. ; Saad, H.M. ; Corte, A. ; Pires, F. ; Fugler, P. ; Noel, P. ; Rabinzohn, P. ; Beinglass, I.
Author_Institution
Appl. Mater., Meylan, France
fYear
1997
fDate
16-19 March 1997
Firstpage
64
Lastpage
67
Abstract
Stable fluorine doped PETEOS and HDP-CVD silicon oxide thin films have been deposited without any capping layer. Gap-filling of 0.35 /spl mu/m metal spacing (2:1 A.R.) has been studied, and partial integration has been successfully achieved.
Keywords
CVD coatings; dielectric thin films; fluorine; metallisation; plasma CVD coatings; silicon compounds; 0.35 micron; HDP-CVD; PETEOS; SiO/sub 2/:F; aspect ratio; fluorine doped silicon oxide thin film; gap filling; inter-metal dielectric; interconnect metallization; stack integration; Absorption; Annealing; Chemistry; Dielectric thin films; Metallization; Moisture; Performance evaluation; Semiconductor thin films; Silicon; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop
Conference_Location
Villard de Lans, France
ISSN
1266-0167
Type
conf
DOI
10.1109/MAM.1997.621061
Filename
621061
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