Title :
Optimizing the power confinement in silicon slot waveguides by use of Finite Element Method
Author :
Leung, D.M.H. ; Kan, X.B. ; Rahman, B.M.A. ; Kejalakshmy, N. ; Grattan, K.T.V.
Author_Institution :
Sch. of Eng. & Math. Sci., City Univ. London, Northampton, UK
Abstract :
In this paper, the power confinement and the power density in the slot region of a vertical and horizontal slot waveguide are optimized; full-vectorial H and E-field profiles along with Poynting vector are also shown for both of these silicon waveguides. Bending loss of such slot waveguides is also presented.
Keywords :
bending; finite element analysis; integrated optics; optical losses; optical waveguides; silicon-on-insulator; Poynting vector; Si; bending loss; finite element method; full-vectorial E-field profiles; full-vectorial H-field profiles; horizontal slot waveguide; power confinement; power density; vertical slot waveguide; Abstracts; Educational institutions; TV; Nanophotonics and photonic crystal; Numerical approximation and analysis; Waveguides;
Conference_Titel :
Communications and Photonics Conference and Exhibition, 2011. ACP. Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-8194-8961-6
