DocumentCode
2241865
Title
Improved SOA in low cost power transistor
Author
Leung, Samuel ; New, Thorndike
Author_Institution
Motorola Semiconductor Group, Phoenix, Arizona 85018
fYear
1978
fDate
13-15 June 1978
Firstpage
195
Lastpage
201
Abstract
Recent theories on second breakdown are reviewed. A simple concept on avalanche injection is proposed. The condition of distributed series resistance on stability factor analysis is discussed. An ingenious Motorola patent to realize this condition with low cost precision is illustrated and results on Power Base(R) product design shown. Observations confirm the substantial SOA improvement using above design features on the same emitter geometry and chip size. Conventional hot spot was not noted.
Keywords
Electric breakdown; Power transistors; Resistance; Semiconductor optical amplifiers; Temperature; Temperature measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1978 IEEE
Conference_Location
Syracuse, New York, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1978.7072353
Filename
7072353
Link To Document